منابع مشابه
Spin-valve effect in soft ferromagnetic sandwiches
We demonstrate in a variety of systems that the in-plane resistivity of sandwiches of soft ferromagnetic layers separated by nonmagnetic metallic layers depends on the relative angle between their magnetizations. We observe this phenomenon. which we term the spin-valve effect, in sandwiches where we are able to control the relative angle between the magnetizations of two ferromagnetic layers ei...
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We study electronic transport through a ferromagnet normal-metal ferromagnet system and we investigate the effect of hyperfine interaction between electrons and nuclei in the normal-metal part. A switching of the magnetization directions of the ferromagnets causes nuclear spins to precess. We show that the effect of this precession on the current through the system is large enough to be observe...
متن کاملSpin-dependent Seebeck effect in non-local spin valve devices
Mikhail Erekhinsky, Fèlix Casanova, Ivan K. Schuller, and Amos Sharoni Department of Physics, Center for Advanced Nanoscience, University of California, San Diego, La Jolla, California 92093, USA CIC NanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country, Spain Department of Physics, Institute of Nanotechnology and A...
متن کاملTheory of the ac spin-valve effect.
The spin-valve complex magnetoimpedance of symmetric ferromagnet-normal-metal-ferromagnet junctions is investigated within the drift-diffusion (standard) model of spin injection. The ac magnetoresistance-the real part difference of the impedances of the parallel and antiparallel magnetization configurations-exhibits an overall damped oscillatory behavior, as an interplay of the diffusion and sp...
متن کاملPerpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor.
A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (CoyCu) 4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor str...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2007
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl0628192